PTFA261301F V1

PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz Description The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS ® FETs intended for ultra-linear applications. They are characterized for CDMA, CDMA2000, Super3G (3GPP TSG RAN), and WiMAX operation from 2620 to 2680 MHz. Full gold metallization ensures excellent device lifetime and reliability. PTFA261301E Package H-30260-2 PTFA261301F Package H-31260-2 Features 3-Carrier CDMA2000 Performance at 28 Volts IDQ = 1.4 A, ƒ = 2680 MHz 30 Efficiency -20 -30 20 Alt2 -40 15 Alt -50 10 ACPR -60 5 -70 0 0 5 10 15 20 25 30 Thermally-enhanced, Pb-free packages, RoHS-compliant • Broadband internal matching • Typical CDMA performance at 2.68 GHz - Average output power = 26 W - Linear Gain = 13 dB - Efficiency = 24% • Typical CW performance, 2680 MHz, 28 V - Output power at P–1dB = 152 W - Efficiency = 47% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 130 W (CW) output power 25 Drain Efficiency (%) Adj. Channel Power Ratio (dBc) -10 • 35 Output Power, avg. (W) RF Performance CDMA IS-95 Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 1.4 A, POUT = 26 W average, ƒ = 2680 MHz Characteristic Symbol Min Typ Max Unit Adjacent Channel Power Ratio ACPR — –45 — dBc Gain Gps — 13 — dB Drain Efficiency ηD — 24 — % All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 12 Rev. 07, 2007-04-04 PTFA261301E PTFA261301F RF Performance (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 1.4 A, POUT = 130 W PEP, ƒ = 2680 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 12.5 13.5 — dB Drain Efficiency ηD 34.5 36 — % Intermodulation Distortion IMD — –28.5 –27 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, V DS = 0.1 V RDS(on) — 0.07 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 1.4 A VGS 2.0 2.4 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 449 W 2.56 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 130 W CW) RθJC 0.39 °C/W Ordering Information Type Package Outline Package Description Marking PTFA261301E H-30260-2 Thermally-enhanced slotted flange, single-ended PTFA261301E PTFA261301F H-31260-2 Thermally-enhanced earless flange, single-ended PTFA261301F *See Infineon distributor for future availability. Data Sheet 2 of 12 Rev. 07, 2007-04-04 PTFA261301E PTFA261301F Typical Performance (data taken in a production test fixture) Two–tone Performance Two-tone Performance at 28 V IDQ = 1.4 A, ƒ = 2680 MHz, tone spacing = 1 MHz at 32 V IDQ = 1.4 A, ƒ = 2680 MHz, tone spacing = 1 MHz 0 40 35 25 -30 IM5 -40 20 IM7 -50 15 -60 10 20 40 60 80 -20 30 IM3 -30 25 -40 IM5 20 -50 IM7 15 10 -70 0 20 40 60 5 100 80 Output Power, avg. (W) Output Power, avg. (W) CDMA IS-95 CDMA IS-95 at 28 Volts IDQ = 1.4 A, ƒ = 2680 MHz, tone spacing = 1 MHz at 32 Volts IDQ = 1.4 A, ƒ = 2680 MHz, tone spacing = 1 MHz -10 30 Efficiency -20 Adj. Channel Power Ratio (dBc) Adj. Channel Power Ratio (dBc) 35 -60 5 100 -70 0 IM3, 5, 7 (dBc) 30 IM3 Drain Efficiency (%) -20 -10 25 -30 20 ACPR -40 15 Alt -50 10 -60 Drain Efficiency (%) IM3, 5, 7 (dBc) -10 Efficiency 5 Alt2 -70 0 0 5 10 15 20 25 30 30 -20 25 Efficiency -30 20 ACPR -40 15 -50 10 -60 5 Alt2 Alt -70 0 5 10 15 20 25 30 35 Output Power, avg. (W) Output Power, avg. (W) Data Sheet -10 0 35 Drain Efficiency (%) Efficiency Drain Efficiency (%) 40 0 3 of 12 Rev. 07, 2007-04-04 PTFA261301E PTFA261301F Typical Performance (cont.) CW Drive-up Efficiency CDMA2000 Performance IDQ = 1.4 A, ƒ = 2680 MHz at 32 Volts IDQ = 1.4 A, ƒ = 2680 MHz, tone spacing = 1 MHz 50 Adj. Channel Power Ratio (dBc) Drain Efficiency (%) 28 V 27 V 40 32 V 30 20 10 0 50 100 150 200 -10 30 -20 25 Efficiency -30 20 -40 15 Alt2 -50 10 Alt -60 Drain Efficiency (%) 60 5 ACPR -70 0 0 Output Power (W) 5 10 15 20 25 30 35 Output Power, avg. (W) Power Sweep Gain and Return Loss vs. Frequency VDD = 28 V, ƒ = 2680 MHz VDD = 28 V, IDQ = 1.4 A, POUT = 30 W 14 -5 Gain (dB) Gain 13 -10 12 -15 Return Loss 11 10 2.60 15 -20 2.62 2.64 2.66 2.68 -25 2.70 14 IDQ = 1.1 A 13 12 35 Frequency (GHz) Data Sheet IDQ = 1.7 A IDQ = 1.4 A Power Gain (dB) 0 Return Loss (dB) 15 40 45 50 55 Output Power (dBm) 4 of 12 Rev. 07, 2007-04-04 PTFA261301E PTFA261301F Gain & Efficiency vs. Output Power Gain & Efficiency vs. Output Power VDD = 28 V, IDQ = 1.4 A, ƒ = 2680 MHz VDD = 32 V, IDQ = 1.4 A, ƒ = 2680 MHz 60 16 60 15 50 15 50 Gain (dB) 40 30 13 Efficiency 12 20 11 10 35 40 45 50 Gain 14 Gain (dB) Gain 14 Drain Efficiency (%) 16 40 13 30 12 20 10 11 0 10 10 Efficiency 0 35 55 Drain Efficiency (%) Typical Performance (cont.) 40 45 50 55 Output Power (dBm) Output Power (dBm) 2-Tone Performance Gain, Efficiency & RL vs. Frequency 3-Carrier CDMA2000 Performance VDD = 28 V, IDQ = 1.4 A, ƒ = 2680 MHz VDD = 28 V, IDQ = 1.4 A, POUT = 65 W 40 -5 60 -40 -10 RL 25 20 15 -15 Gain ACP, 25°C ALT, 25°C -45 -50 40 ALT, 90°C 30 -55 ACP, 90°C Efficiency, 25°C 20 -60 -65 10 Adjacent Channel Power Ratio (dBc) 30 50 Drain Efficiency (%) 35 Input Return Loss (dB) Gain (dB), Efficiency (%) Efficiency Efficiency, 90°C 10 2580 2600 2620 2640 2660 2680 35 38 41 44 47 50 Output Power, Avg. (dBm) Frequency (MHz) Data Sheet -70 0 -20 2700 5 of 12 Rev. 07, 2007-04-04 PTFA261301E PTFA261301F Typical Performance (cont.) WiMAX Performance VDD = 28 V, IDQ = 1.25 A, (modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz) 30 -15 Efficiency 25 -20 ƒ = 2.62 GHz ƒ = 2.68 GHz 20 -25 ƒ = 2.65 GHz 0.28 A 1.03 1.39 A 1.01 2.09 A 1.00 4.17 A Efficiency (%) Normalized Bias Voltage (V) 0.83 A 1.02 6.26 A 0.99 8.34 A 0.98 10.43 A 0.97 12.52 A 0.96 0.95 -20 15 -30 10 -35 5 -40 0 0 20 40 60 80 100 EVM (dBc) Bias Voltage vs. Temperature Voltage normalized to typical gate voltage, series show current -45 15 20 Case Temperature (°C) 25 30 35 40 45 50 Output Power (dBm) WiMAX Performance WiMAX Performance VDD = 28 V, IDQ = 1.25 A, ƒ = 2650 MHz, (modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz) -20 VDD = 28 V, ƒ = 2650 MHz (modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz) -20 t = –20 °C -25 -25 EVM (dB) EVM (dB) t = +25 °C -30 -35 t = +85 °C -40 IDQ = 0.80 A -30 -35 IDQ = 1.75 A -40 IDQ = 1.25 A -45 -45 15 20 25 30 35 40 45 15 50 25 30 35 40 45 50 Output Power (dBm) Output Power (dBm) Data Sheet 20 6 of 12 Rev. 07, 2007-04-04 PTFA261301E PTFA261301F AT Broadband Circuit Impedance HS T O W A RD GE NER Z0 = 50 Ω S Frequency Z Source W Z Load W R jX R jX 2590 6.7 0.45 1.6 –2.7 2620 5.8 –0.1 1.5 –2.8 2650 5.8 0.4 1.4 –3.0 2680 6.3 0.3 1.5 –3.4 2710 5.4 0.3 1.3 –3.7 0 .0 2710 MHz Z Source 2590 MHz Z Load 2590 MHz 0 .1 2710 MHz < --- WA V E MHz RD L OAD HS T O W A L ENG T G 0.2 Z Load 0.1 Z Source 0. 1 D 0. 2 See next page for circuit information Data Sheet 7 of 12 Rev. 07, 2007-04-04 PTFA261301E PTFA261301F Reference Circuit C1 0.001µ F R2 1.3K V R1 1.2K V QQ1 LM7805 VDD Q1 BCP56 C2 0.001µ F R3 2K V C3 0.001µ F R4 2K V R5 5.1K V R6 10V C4 10µF 35V C5 0.1µF R7 5.1K V C6 4.5pF L1 C10 4.5pF l5 C7 0.7pF l4 C8 4.5pF R F_IN l1 C11 1µF C12 0.1µF l8 C19 4.5pF DUT l2 l3 l6 VDD C13 10µF 50V l7 l10 l12 l11 l13 l14 R F_OUT C18 0.5pF C9 1.0pF l9 C14 4.5pF C15 1µF 261301 a ef _sch L2 C16 0.1µF C17 10µF 50V Reference circuit schematic for ƒ = 2680 MHz Circuit Assembly Information DUT PCB PTFA261301E or PTFA261301F 0.76 mm [.030"] thick, εr = 4.5 LDMOS Transistor Rogers TMM4 2 oz. copper Microstrip Electrical Characteristics at 2680 MHz1 Dimensions: L x W (mm) Dimensions: L x W (in.) l1 l2 l3 l4 l5 l6 l7 l8, l9 l10 l11 (taper) l12 l13 l14 0.123 0.137 0.018 0.080 0.265 0.022 0.090 0.250 0.056 0.117 0.036 0.113 0.057 λ, 50.0 Ω λ, 41.3 Ω λ, 41.3 Ω λ, 59.0 Ω λ, 59.0 Ω λ, 14.7 Ω λ, 8.0 Ω λ, 55.0 Ω λ, 4.8 Ω λ, 4.8 Ω / 50.0 Ω λ, 50.0 Ω λ, 50.0 Ω λ, 50.0 Ω 7.47 x 1.47 8.18 x 1.91 1.09 x 1.91 4.95 x 1.02 16.33 x 1.02 1.22 x 7.62 4.88 x 15.24 15.37 x 1.17 3.35 x 29.85 6.35 x 29.85 / 1.42 2.16 x 1.42 6.86 x 1.42 3.48 x 1.42 0.294 0.322 0.043 0.195 0.643 0.048 0.192 0.605 0.132 0.250 0.085 0.270 0.137 x 0.058 x 0.075 x 0.075 x 0.040 x 0.040 x 0.300 x 0.600 x 0.046 x 1.175 x 1.175 / 0.056 x 0.056 x 0.056 x 0.056 1Electrical characteristics are rounded. Data Sheet 8 of 12 Rev. 07, 2007-04-04 PTFA261301E PTFA261301F Reference Circuit (cont.) R5 C5 R3 R4 C4 C3 R2 R1 C1 LM VDD C10 QQ1 C2 C11 R3 VDD C13 Q1 R6 R7 C6 R5 C5 L1 R4 C3 C12 C7 C8 C4 C9 C18 R2 R1 C19 LM QQ1 C2 Q1 R6 R7 C6 C16 VDD C1 VDD C17 C7 L2 A 261301ef_dtl C15 C14 A261301in_01 A261301out_01 A 2 6 1 3 0 1 e f_ a s0y- 5 -0 9 -3 0 Reference circuit assembly diagram (not to scale)* Component Description Suggested Supplier P/N or Comment C1, C2, C3 C4 C5, C12, C16 C6, C8, C10, C14, C19 C7 C9 C11, C15 C13, C17 C18 L1, L2 Q1 QQ1 R1 R2 R3 R4 R5, R7 R6 Capacitor, 0.001 µF Tantalum capacitor, 10 µF, 35 V Capacitor, 0.1 µF Ceramic capacitor, 4.5 pF Digi-Key Digi-Key Digi-Key ATC PCC1772CT-ND 366-1655-2-ND PCC104BCT-ND 100B 4R5 Ceramic capacitor, 0.7 pF Ceramic capacitor, 1.0 pF Capacitor, 1.0 µF Tantalum capacitor, 10 µF, 50 V Ceramic capacitor, 0.5 pF Ferrite, 8.9 mm Transistor Voltage regulator Chip resistor, 1.2 k-ohms Chip resistor, 1.3 k-ohms Chip resistor, 2 k-ohms Potentiometer, 2 k-ohms Chip resistor, 5.1 k-ohms Chip resistor, 10 ohms ATC ATC Toshiba Garrett Electronics ATC Elna Magnetics Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key 100B 0R7 100B 1R0 C4532XTRZA105M TPS106K050R0400 100B 0R5 BDS 4.6/3/8.9-4S2 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P5.1KECT-ND P10ECT-ND *Gerber Files for this circuit available on request Data Sheet 9 of 12 Rev. 07, 2007-04-04 PTFA261301E PTFA261301F Package Outline Specifications Package H-30260-2 45° X (2.03 [.080]) 2X 12.70 [.500] 4X R 1.52 [.060] D (2X 4.83±0.50 [.190±.020]) S +0.10 LID 13.21 –0.15 [.520 +.004 –.006 ] 2X 3.25 [.128] FLANGE 13.72 [.540] 23.37±0.51 [.920±.020] 2X 1.63 [.064] R G SPH 1.57 [.062] 22.35±0.23 [.880±.009] 4.11±0.38 [.162±.015] 0.0381 [.0015] -A27.94 [1.100] 34.04 [1.340] 1.02 [.040] 260-cases_30260 Diagram Notes—unless otherwise specified: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S - flange: 2.54 micron [100 microinch] (min) D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 10 of 12 Rev. 07, 2007-04-04 PTFA261301E PTFA261301F Package Outline Specifications Package H-31260-2 2X 12.70 [.500] 45° X 2.031 [.080] 2x 4.83±0.50 [.190±.020] D 13.72 [.540] LID 13.21 +0.10 –0.15 [.520 +.004 ] –.006 23.37±0.51 [.920±.020] . G 4X R 0.51 [R.020] MAX LID 22.35±0.23 [.880±.009] 4.11±0.38 [.162±.015] 0.0381 [.0015] -A1.02 [.040] SPH 1.57 [.062] FLANGE 23.11 [.910] S 260-cases_31260 Diagram Notes—unless otherwise specified: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S - flange: 2.54 micron [100 microinch] (min) D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 11 of 12 Rev. 07, 2007-04-04 PTFA261301E/F Confidential, Limited Internal Distribution Revision History: 2007-04-04 2006-06-15, Data Sheet Previous Version: Page Subjects (major changes since last revision) 10, 11 Data Sheet Correct package outline information. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International GOLDMOS ® is a registered trademark of Infineon Technologies AG. Edition 2007-04-04 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2004. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 12 of 12 Rev. 07, 2007-04-04